IPC100N04S5L-1R1 optimos ? -5 power-transistor features ? optimos? - power mosfet for automotive applications ? n-channel - enhancement mode - logic level ? aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25c, v gs =10v 100 a t c =100c, v gs =10v 2) 100 pulsed drain current 2) i d,pulse t c =25c 400 avalanche energy, single pulse 2) e as i d =50a 480 mj avalanche current, single pulse i as - 100 a gate source voltage v gs -16v power dissipation p tot t c =25c 150 w operating and storage temperature t j , t stg - -55 ... +175 c value v ds 40 v r ds(on),max 1.1 m ? i d 100 a product summary type package marking IPC100N04S5L-1R1 pg-tdson-8-34 5n04l1r1 1 1 pg-tdson-8-34 r ev. 1.1 page 1 2016-09-07
IPC100N04S5L-1R1 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc ---1.0k/w thermal resistance, junction - ambient r thja 6 cm 2 cooling area 3) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =90a 1.2 1.6 2.0 zero gate voltage drain current i dss v ds =40v, v gs =0v, t j =25c --10a v ds =40v, v gs =0v, t j =125c 2) - - 100 gate-source leakage current i gss v gs =16v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =4.5v, i d =50a -1.11.4 m ? v gs =10v, i d =50a -0.91.1 values r ev. 1.1 page 2 2016-09-07
IPC100N04S5L-1R1 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 6200 8250 pf output capacitance c oss - 1440 1910 reverse transfer capacitance c rss - 80 120 turn-on delay time t d(on) -7-ns rise time t r -6- turn-off delay time t d(off) -47- fall time t f -22- gate char g e characteristics 2) gate to source charge q gs -1723nc gate to drain charge q gd -2233 gate charge total q g - 105 140 gate plateau voltage v plateau -2.6-v reverse diode diode continous forward current 2) i s - - 100 a diode pulse current 2) i s,pulse - - 400 diode forward voltage v sd v gs =0v, i f =50a, t j =25c -0.81.1v reverse recovery time 2) t rr v r =20v, i f =50a, d i f /d t =100a/s -64-ns reverse recovery charge 2) q rr -90-nc 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by package; with an r thjc = 1k/w the chip is able to carry 264a at 25c. t c =25c 2) the parameter is not subject to producti on test- verified by design/characterization. values v gs =0v, v ds =25v, f =1mhz v dd =20v, v gs =10v, i d =100a, r g =3.5 ? v dd =32v, i d =100a, v gs =0 to 10v r ev. 1.1 page 3 2016-09-07
IPC100N04S5L-1R1 1 power dissipation 2 drain current p tot = f( t c ); v gs = 10 v i d = f( t c ); v gs = 10 v 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0 z thjc = f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] 1 s 10 s 100 s 150 s 1 10 100 1000 0.1 1 10 100 i d [a] v ds [v] 0 50 100 150 0 50 100 150 200 p tot [w] t c [ c] 0 10 20 30 40 50 60 70 80 90 100 110 0 50 100 150 200 i d [a] t c [ c] r ev. 1.1 page 4 2016-09-07
IPC100N04S5L-1R1 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c r ds(on) = f( i d ); t j = 25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 6v r ds(on) = f( t j ); i d = 50 a; v gs = 10 v parameter: t j 0.25 0.75 1.25 1.75 2.25 -60 -20 20 60 100 140 180 r ds(on) [m ? ] t j [ c] 3 v 3.5 v 10 v 0 40 80 120 160 200 240 280 320 360 400 0123 i d [a] v ds [v] 2.75 v 2.5 v 2.5 v 2.75 v 3 v 0 2 4 6 8 10 12 0 50 100 150 200 250 300 350 400 r ds(on) [m ? ] i d [a] 3.5 v -55 c 25 c 175 c 0 50 100 150 200 250 300 350 400 1.5 2 2.5 3 i d [a] v gs [v] 10 v r ev. 1.1 page 5 2016-09-07
IPC100N04S5L-1R1 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristics 12 avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 175 c 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] 90 a 900 a 0 0.5 1 1.5 2 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 2 10 3 10 4 0102030 c [pf] v ds [v] 10 1 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 i av [a] t av [s] 25 c 175 c 10 0 10 1 10 2 10 3 00.40.81.2 i f [a] v sd [v] r ev. 1.1 page 6 2016-09-07
IPC100N04S5L-1R1 13 avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 100 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 36 38 40 42 44 46 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 8 v 32 v 0 1 2 3 4 5 6 7 8 9 10 0 20406080100 v gs [v] q gate [nc] 100 a 50 a 25 a 0 100 200 300 400 500 600 700 800 900 1000 25 75 125 175 e as [mj] t j [ c] r ev. 1.1 page 7 2016-09-07
IPC100N04S5L-1R1 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2016 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicat ion of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. r ev. 1.1 page 8 2016-09-07
IPC100N04S5L-1R1 revision history version revision 1.0 revision 1.1 date 2016-08-22 2016-09-07 changes final data sheet detailed package name added r ev. 1.1 page 9 2016-09-07
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